VIGO System S.A. is a world’s leading manufacturer of standard and customized high-tech uncooled photodetectors of middle and long wavelength range. In the 80s, at the Military Technical Academy, a team led by prof. dr. hab. Joseph Piotrowski developed a unique technology for the production of detectors working without cryogenic cooling and then implemented it into a newly created company. In the 80s, at the Military Technical Academy, a team led by prof. dr. hab. Joseph Piotrowski developed a unique technology for the production of detectors working without cryogenic cooling and then implemented it into a newly created company.
Detectors produced in VIGO are used in various areas such as:
PVI-5-1×1-TO39-NW-36is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.
PVI-4-1×1-TO39-NW-36is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 4 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.
PVI-2TE-4-1×1-TO8-wAl2O3-36两级热电的冷却红外photovol吗taic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
PVI-2TE-5-1×1-TO8-wAl2O3-36两级热电的冷却红外photovol吗taic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
PVI-2TE-6-1×1-TO8-wZnSeAR-36两级热电的冷却红外photovol吗taic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
PVI-4TE-6-1×1-TO8-wZnSeAR-36is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
PVM-10.6-1×1-TO39-NW-90is uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation.
PVM-2TE-10.6-1×1-TO8-wZnSeAR-70两级热电的冷却红外photovol吗taic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
PEM-10.6-2×2-PEM-SMA-wZnSeAR-48is uncooled IR photovoltaic multiple junction HgCdTe detector based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. This device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation. This device is mounted in specialized package with incorporated magnetic circuit inside and SMA signal output connector. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects and protects against pollution.
本系列是易于使用,没有冷却和散热片needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Standard detectors are available inTO39orBNCpackages without windows. Various windows, other packages and connectors are available upon request.
ThePV-2TE-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR photovoltaic detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available inTO8packages withwAl2O3orwZnSeARwindows. Other packages, windows and connectors are also available.
PC-3TE series features three-stage thermoelectrically cooled IR photoconductive detectors based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
PC-4TEseries features four-stage thermoelectrically cooled IR photoconductive detectors based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
ThePVI-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR photovoltaic detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Standard detectors are available inTO39orBNCpackages without windows. Various windows, other packages and connectors are available upon request.
Uncooled, Immersion: Yes
ThePVI-2TE-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR photovoltaic detector on two-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available inTO8packages withwAl2O3orwZnSeARwindows. Other packages, windows and connectors are also available.
Two-stage TE cooled, Immersion: Yes
ThePVI-3TE-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR photovoltaic detector on three-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available inTO8packages withwAl2O3orwZnSeARwindows. Other packages, windows and connectors are also available.
ThePVI-4TE-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR photovoltaic detector on four-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available inTO8packages withwAl2O3orwZnSeARwindows. Other packages, windows and connectors are also available.
ThePVM-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR multiple junction photovoltaic detector. The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Standard detectors are available inTO39orBNCpackages without windows. Various windows, other packages and connectors are available upon request
ThePVM-2TE-λopt光电探测器系列(λ选择最佳波长n micrometers) feature IR multiple junction photovoltaic detector on two-stage thermoelectrical cooler.
The devices are optimized for the maximum performance at λopt, large area devices. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available inTO8packages withwZnSeARwindows. Other packages, windows and connectors are also available..
The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gapHgCdTesemiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available inTO8packages withwZnSeARwindows. Other packages, windows and connectors are also available.
The PEM series detectors operate on the photoelectromagnetic effect in the semiconductors. The devices are typically optimized for the best performance at 10.6 μm.
The detector includes active element based on(HgCd)Teband gap engineered with selected composition and doping profiles, and miniature permanent magnets to produce a magnetic field. ThePEMdetectors are well suited for heterodyne detection of 10.6 μm radiation. Exhibiting no flicker noise, they can be at the same time used for detection of CW and low frequency modulated radiation in the whole 2 to 11 μm spectral range. Custom devices such as single elements of various sizes, quadrant cells and multielement arrays, various specialized packages and connectors are available upon request. Standard detectors are available in specializedPEMpackages (with SMA connectors) withwZnSeARwindows.
PEMI-10.6is an uncooled HgCdTe photovoltaic optically immersed IR detectors based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.
PCI-3TE-12-1×1-TO8-wZnSeAR-36is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.
ThePC-λopt (λopt - optimal wavelength in micrometers) feature IR photoconductive detector.
本系列是易于使用,没有冷却和散热片needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (< 20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing.
Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.
ThePC-2TE-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) feature IR photoconductive detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.
ThePC-3TE-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) feature IR photoconductive detector on three-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows.. Other packages, windows and connectors are also available.
ThePC-4TE-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) feature IR photoconductive detector on four-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (ង kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.
ThePCI-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) feature IR photoconductive detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.
ThePCI-2TE-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) feature two-stage thermoelectrical cooler IR photoconductive detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.
ThePCI-3TE-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) featureIR photoconductive detector on three-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available..
ThePCI-4TE-λ选择光电探测器系列(λ选择最佳wavelength in micrometers) featureIR photoconductive detector on four-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.
PVAis an uncooled IR photovoltaic detector based on InAs alloy. The device is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive.
Features:
Models:
PVA-2TE-3is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. The device is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
Features:
Models:
PVIA-3is an uncooled IR photovoltaic detector based on InAs alloy, optically immersed in order to improve performance of the device. The detector is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive.
Features:
Models:
PVIA-2TE-3is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy, optically immersed in order to improve performance of the device. The detector is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
Features:
Models:
PVMQ-10.6is an uncooled IR phtovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant geometry. The device is optimized for the maximum performance at 10.6 µm. The main application of PVMQ detector is laser beam profiling and positioning.
PCQ-10.6is uncooled IR photoconductive quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant geometry. The device is optimized for the maximum performance at 10.6 µm. The detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The main application of PCQ detectors is laser beam profiling and positioning.
Integration of detector, preamplifier and TEC controller in compact, seald package has important advantages: miniaturization, beter high-frequency performance, immunity to electromagentic interferences (EMI), improved reliability, easy of use and reduced costs.
There are three models in universal module series:
The output signal is standard voltage with a fifty Ohms impedance (50Ω). Additional DC output is available as a standard.
Programmable detection modules enable control of many parameters, such as bandwidth and gain, even during normal operation.
This opens up completely new possibilities to designers of measuring systems.
In a fully analogue input circuit, many switching elements are used, even with a variable, digitally-controlled capacitance to compensate the transimpedance input stage.
The internal architecture is similar to standard detection modules. The main difference is that most of the internal functional blocks are configurable.
To provide information about the module status it is equipped with bias and dc offset monitoring circuits. It is possible to build a system with adaptive gain or overload protection. Adjustable bandwidth can help to achieve the best possible noise performance for various signal types.
Many applications require high-time resolution or, equivalently, high frequency-bandwidth optical detection.
For these applications, VIGO developed ultra-high-speed detection modules series.
It was necessary to apply a special design, both in term electronics and mechanics. The system was designed to suport the propagation of high-speed signals, mounting the detector to the enclosure as close ad possible to a PCB board and input circuits. The manufacturing process requires fine tuning of the circuit with a specific detector.
Additionally, it has DC monitor. It is a DC coupled signal, taken directly from the 1st stage preamplifier. One should take into account the 1 VDC offset at the DC monitor output.
This output may be used for:
UHSM is the one of the fastest long-wavelength infrared detection modules series on the market.
MicroM与uncoo微尺度检测模块led photovoltaic multiple junction detector. It is optimized for operation in the spectral range from 2 um to 12 µm and frequency bandwidth from DC to 10 MHz
It is easy to assembly in space limited measuring systems of long wavelength infrared applications.
AIPis a new generation of transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non-biased VIGO detectors. AIP is „all‑in-one” device – a preamplifier is integrated with a fan and a thermoelectric cooler controller in a compact housing. It is very convenient and user‑friendly device, thus can be easily used in a variety of applications.
FIPis a series of high speed, transimpedance, AC coupled preamplifiers, intended to operate with biased TE cooled VIGO detectors. Fast preamplifier enables precise I-V conversion, detector biasing up to 800 mV and simultaneously maintains compact size and keeps current noise low. FIP is equipped with a fan and does not require additional heat dissipation. It is suitable for applications requiring wide frequency bandwidth. Additional DC output is available as an option
Features:
MIPis a series of medium-size transimpedance, DC or AC coupled preamplifiers, intendend to operate with either biased or non-biased VIGO detectors. MIP is equipped with a fan and does not require any additional external heatsink. It is one of the most user-friendly preamplifier which surely facilitate work.
Features:
PIPis a series of programmable “smart” preamplifiers. Due to the modern internal configuration, it offers extreme flexibility combined with superior signal parameters and high reliability. Built-in voltage monitor allows to check and optimize the working conditions (supply voltages, detector bias voltage, first and last stage output voltage offset etc.).
There is also possible to change the gain, coupling (AC/DC), optimize the first stage transimpedance and manually or automatically suppress the voltage offset.
Optimized parameters are stored into the internal EEPROM memory and automatically loaded after the power is on. Reset to default settings is available at any time. For detection module safety detector bias adjusting is blocked by default. User can request to enable this option while ordering.
For proper operationPTCC-01 TECcontroller is required.
Features:
SIP-TO8is a series of ultra-small transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non biased detectors. It is compatible with thermoelectrically cooled detectors in TO8 package. SIP-TO8 is dedicated for OEM applications and requires external heatsink (MHS-2). There is a possibility to adjust gain (devices with a frequency bandwidth up to 100 MHz).
Features:
SIP-TO038is a series of ultra-small transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non biased detectors. It is compatible with VIGO thermoelectrically cooled detectors in TO39 package. SIP-TO39 is dedicated for OEM applications and does not require external heatsink. There is a possibility to adjust gain (devices with a frequency bandwidth up to 100 MHz).
Features:
PPS-03is a small-size, easy to use and universal preamplifier power supply, designed to operate with VIGO detection module microM-10.6 and other devices containing uncooled detectors in TO39 packages and preamplifiers SIP-TO39.
ThePPS-03preamplifier power supply is designed for supplying VIGO System IR Detection Modules included uncooled IR detectors.Features:
PTCC-01is a series of programmable, precision low-noise thermoelectric cooler controllers. They are designed to operate with VIGO IR detection modules: LabM-I-6, LabM-I-10.6 and other devices containing TE cooled detectors and preamplifiers: PIP, MIP, FIP, SIP-TO8.
Features:
AlGaAs/GaAs:
GaAsP/GaAs: strained QW edge emitting lasers
InGaAsP/GaAs: QW lasers 808nm
InGaAs/AlGaAs/GaAs: strained QW lasers
InAs/GaAs: QD lasers
AlGaAs/GaAs: passive waveguides
Manufactured to specification
InGaAsP/InP: strained or matched QW edge emitting lasers and SOAs 1300 - 1600nm
InGaAs/InP: QW edge emitting lasers
InGaAsP/InP: VCSEL structures
InAlGaAs/InP: edge emitting and VCSEL structures
InGaAsP/InP: passive devices
InGaAs: photodetectors
InAlAs/InGaAs/InP: HEMTs
Manufactured to specification